The dependence of the minority carrier lifetime on σ is ignored. ![]() The changes in the transistor parameters are due to the influence of mechanical stress σ on the effective width of the forbidden band. The analysis is carried out on the assumption that the current is due to diffusion of the minority carriers. ![]() A theoretical analysis is given of the dependence of the parameters of a transistor on a force F applied to the emitter and distributed nonuniformly across its surface.
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